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PD - 91274D
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level IRHY7130CM 100K Rads (Si) IRHY3130CM 300K Rads (Si) IRHY4130CM 600K Rads (Si) IRHY8130CM 1000K Rads (Si) RDS(on) 0.18 0.18 0.18 0.18 HEXFET(R) ID 14.4A 14.4A 14.4A 14.4A
IRHY7130CM JANSR2N7380 100V, N-CHANNEL REF: MIL-PRF-19500/614
RAD-Hard HEXFET TECHNOLOGY
TM (R)
QPL Part Number
JANSR2N7380 JANSF2N7380 JANSG2N7380 JANSH2N7380
TO-257AA
International Rectifier's RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 14.4 9.1 58 75 0.6 20 150 -- -- 6.0 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 ( 0.063 in.(1.6mm) from case for 10s) 7.0 (Typical )
g
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1
12/17/01
IRHY7130CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
100 -- -- -- 2.0 2.5 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.11 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 7.0 -- -- 0.18 0.20 4.0 -- 25 250 100 -100 50 10 20 35 75 70 60 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID =9.1A VGS = 12V, ID = 14.4A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 9.1A VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID =14.4A VDS = 50V VDD = 50V, ID =14.4A VGS =12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA
nC
ns
nH
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
960 340 85
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 14.4 58 1.8 275 2.5
Test Conditions
A
V nS C Tj = 25C, IS = 14.4A, VGS = 0V Tj = 25C, IF = 14.4A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
R thJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 1.67 80
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Pre-Irradiation Radiation Characteristics
IRHY7130CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-257AA) Diode Forward Voltage
100K Rads(Si)1
300 - 1000K Rads (Si)2
Units V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=80V, VGS =0V VGS = 12V, ID =9.1A VGS = 12V, ID =9.1A VGS = 0V, IS = 14.4A
Min 100 2.0 -- -- -- -- -- --
Max -- 4.0 100 -100 25 0.18 0.18 1.8
Min 100 1.25 -- -- -- -- -- --
Max -- 4.5 100 -100 25 0.24 0.24 1.8
1. Part number IRHY7130, (JANSR2N7380) 2. Part numbers IRHY3130 , IRHY4130 and IRHY8130 (JANSF2N7380, JANSG2N7380 and JANSH2N7380)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LE T MeV/(mg/cm)) 28 36.8 Energy (MeV) 285 305 Range (m) @VGS=0V Cu Br 43 39 100 100 100 90 VD S(V) @VGS=-5V @VGS=-10V @VGS=-15V 100 70 80 50 @VGS=-20V 60 --
120 100 80 VDS 60 40 20 0 0 -5 -10 VGS -15 -20 -25 Cu Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHY7130CM
Pre-Irradiation
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
10
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
5.0V
1
5.0V
1
0.1 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
0.1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
I D , Drain-to-Source Current (A)
TJ = 25 C TJ = 150 C
10
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 14.4A
2.0
1.5
1.0
1
0.5
0.1 5 7 9
V DS = 50V 20s PULSE WIDTH 11 13
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
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Pre-Irradiation
IRHY7130CM
2000
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
1500
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 14 A
16
VDS = 80V VDS = 50V VDS = 20V
12
1000
Ciss
8
500
C oss C rss
4
0 1 10 100
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50 60
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
10
TJ = 25 C
I D , Drain Current (A)
TJ = 150 C
100
100us
10
1
1ms
0.1 0.0
V GS = 0 V
0.5 1.0 1.5 2.0 2.5
1
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms
100
1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHY7130CM
Pre-Irradiation
15
VDS VGS
12
RD
D.U.T.
+
I D , Drain Current (A)
RG
9
-VDD
VGS
Pulse Width 1 s Duty Factor 0.1 %
6
Fig10a. Switching Time Test Circuit
3
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHY7130CM
EAS , Single Pulse Avalanche Energy (mJ)
400
1 5V
300
TOP BOTTOM ID 6.4A 9.1A 14A
VD S
L
D R IV E R
200
RG
D .U .T
IA S
+ - VD D
A
VGS 20V
tp
0 .0 1
100
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
V (B R )D S S tp
Starting T , Junction Temperature( C) J
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHY7130CM
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25V, starting TJ = 25C, L=1.45mH Peak IL = 14.4A, VGS =12V ISD 14.4A, di/dt 395A/s, VDD 100V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-257AA
A 10.66 [.420] 10.42 [.410] 3X O 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035]
13.63 [.537] 13.39 [.527]
16.89 [.665] 16.39 [.645] 10.92 [.430] 10.42 [.410] 1 2 3
B
C 15.88 [.625] 12.70 [.500]
0.71 [.028] MAX.
2.54 [.100] 2X 3X O
0.88 [.035] 0.64 [.025] CA B
3.05 [.120]
O 0.50 [.020]
NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994. CONT ROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA.
PIN AS S IGNMENTS
1 = DRAIN 2 = S OURCE 3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/01
8
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